REMC50M500M

EMC Power Amplifiers by RF-Lambda (42 more products)
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The REMC50M500M from RF-Lambda is an EMC Power Amplifier that operates from 50 to 500 MHz. It delivers a saturated output power of 200 W (~53 dBm) with a small signal gain of 53 dB and a power-added efficiency (PAE) of 30%. This amplifier uses cutting-edge GaN technology for exceptional performance and has a calibration feature that enables customers to obtain the best performance through time and temperature changes. It has an operating temperature range from 0 to +50°C and includes overvoltage and overcurrent protection. This amplifier is available in a benchtop enclosure that measures 482.6 x 447.0 x 133.2 mm with N-type (female) connectors and also has a hermetically sealed option. It is ideal for use in wireless infrastructure, military and aerospace, test instrumentation, radar systems, 5G wireless communications, microwave radio systems, TR modules, research and development and cellular base station applications. The amplifier requires an AC supply of 110/220 V.

Product Specifications

Product Details

  • Part Number :
    REMC50M500M
  • Manufacturer :
    RF-Lambda
  • Description :
    200 W Benchtop GaN EMC Power Amplifier from 50 to 500 MHz

General Parameters

  • Frequency :
    50 to 500 MHz
  • Gain :
    53 dB
  • Noise Figure :
    8 dB
  • Gain flatness :
    3 dB
  • Power (dBm) :
    53 dBm
  • Power (W) :
    200 W
  • P1dB (dBm) :
    51 dBm
  • Saturated Power :
    53 dBm
  • AC Voltage :
    110/220 V
  • Impedance :
    50 Ohms
  • PAE :
    30 %
  • Input Return Loss :
    15 dB
  • Applications :
    Wireless Infrastructure, 5G, Aerospace & Defense, Radar
  • Package Type :
    Benchtop / Rackmount
  • Connectors :
    N Type, N Type - Female
  • Operating Temperature :
    0 to 50 Degree C
  • Storage Temperature :
    -55 to 105 Degree C

Technical Documents

View more details on the manufacturer's website

Technical Articles

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